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Technical papers List
| Characteristics of AlN Layer on 4 inch Sapphire Substrate by High Temperature Annealing in Nitrogen Atmosphere |
| Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate |
| Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition |
| Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si |
| Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient |
| High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience |
| Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application |
| Homoepitaxial Growth Technique of GaN for Vertical Power Electronic Devices (Japanese only) |
| Relationship between Al compositions of AlGaN buffer layer and vertical leakage current of AlGaN/GaN HEMT on Sio Substrate
MRS Spring |
| Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System
2016 ICMOVPE |
| Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System
CSW 2016 |
| Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures
CSW 2016 |
| GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO
IWUMD 2016 |
| Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates
Isplasma 2016 |
| Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates
MRS Advances |
| Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer
MRS2016 spring meeting (Poster Session) |
| NEW TYPE MOCVD SYSTEM “SR4000HT” |
| Relationship between AlN layer and vertical breakdown voltage of AlGaN/GaN HEMT on Si substrate Advance copy for the 76th Autumn meeting of Japan Society of Applied Physics (Poster Session) |
| Growth of n-type AlGan(Al>0.5) at high rate using high-speed-flow MOCVD Advance copy for the 76th Autumn meeting of Japan Society of Applied Physics (Poster Session) |
| Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session) |
| GaN Single Layer Growth on GaN Substrate with Low C Impurity Density by MOCVD Advance copy for the 62th Spring Meeting of the Japan Society of Applied Physics (Poster Session) |
| Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V) Appl. Phys. Express 7, 041003 (2014) |
| Industry MOCVD: III-N film growth Compound Semiconductor-Volume 20, Number 2-March 20 |
| Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool Jpn. J. Appl. Phys. 52 (2013) 08JB06 |
| Development of high growth rate MOCVD system (UR26K) for large diameter substrate (8 inch × 6 wafers) |
| High Speed Growth of Nitride-Based Electronic Device Structure on Large Diameter Silicon Substrate with MOCVD |
| High growth rates of AlN and AlGaN on 8" silicon wafer using metal-organic vapor phase epitaxy reactor |
| Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate Appl. Phys. Express 6 (2013) 026501 |
| High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system Journal of Crystal Growth |
| Control of Thickness and Composition Variation of AlGaN/GaN on 6" and 8" Substrates Using Multiwafer High-Growth-Rate MOCVD Tool Advance copy for IWN 2012 (International Workshop on Nitride Semiconductors) |
| MOCVD growth of AlN/GaN superlattice barrier with low sheet resistance Advance copy for the 59th Spring Meeting (2012) of the Japan Society of Applied Physics and Related Societies |
| Current collapse of HJ-FET with MOCVD-grown GaN/AlN superlattice barrier Advance copy for the 59th Spring Meeting (2012) of the Japan Society of Applied Physics and Related Societies |
| Atmospheric pressure growth of GaN and Al0.1Ga0.9N using 4" x 11 multi wafer MOVPE reactor (UR25K) Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics |
| Initial Stage in Photoelectrochemical Etching of GaN and InGaN/GaN MQWs and their PL characteristics Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics |
| Comparison of H2 generation efficiency in water electrolysis between n-GaN and Pt electrodes Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics |
| Reduction of Drain Conductance in Recess-Gate AlGaN/GaN HEMTs Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics |
| Effects of CF4-Plasma Surface Treatment to AlGaN/GaN MOS-HFETs Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies |
| Effect of field plate for current collapse Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies |
| Correlation between Hydrogen Generation and Flat-band Potentials of Ga/N-face using Free-standing GaN Electrodes Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies |
| Observation by AFM about Initial Stage in Photo Electro Chemical Etching of GaN-related Semiconductors Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies |
| Quantification of hydrogen generation by water decomposition on GaN-based semiconductor electrode Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies |
| Effect of growth pressure in AlN on Si(111) at high growth temperature Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies |
| Influence of Impurities in NH3 Gas on InGaN Light Emitting Diodes grown by Metal-organic Vapor Phase Epitaxy Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies |
| High Rate Growth of GaN with Atmospheric Pressure MOVPE Advance copy for the 69th Autumn Meeting (2008) of the Japan Society of Applied Physics |
| High growth rate metal organic vapor phase epitaxy GaN "Journal of Crystal Growth 310(2008)3950-3952)" |
| Multiwafer atmospheric-pressure MOVPE reactor for nitride semiconductors and ex-situ dry cleaning of reactor components using chlorine gas for stable operation "Phys.Stat.Sol.(c)5,No.9,3017-3019(2008)" |
| Plasma-CVD-Deposited SiN Surface Passivation on AlGaN/GaN HEMTs Advance copy for the 55th Spring Meeting (2008) of the Japan Society of Applied Physics and Related Societies |
| High Breakdown Voltage AlGaN/GaN HEMT with Field Plate Structure Advance copy for the 55th Spring Meeting (2008) of the Japan Society of Applied Physics and Related Societies |
| Effects of Moisture Impurities in NH3 Gas on InGaN Light Emitting Diodes grown by Metal-organic Vapor Phase Epitaxy Advance copy for the 55th Spring Meeting (2008) of the Japan Society of Applied Physics and Related Societies |
| Effects of trace moisture in NH3 gas on electroluminescence intensity of InGaN LED -Moisture control in NH3 gas for MOVPE growth of LED structure - IEICE Technical Committee (October 11 - 12, 2007, University of Fukui) |
| Multi-wafer Atmospheric Pressure MOVPE Reactor for Nitride Semiconductors and ex-situ Dry Cleaning of Reactor Components by Chlorine Gas for Stable Operation Advance copy for the 34th International Symposium on Compound Semiconductors (ISCS2007) |
| Dependence of maximum drain current and transconductance on device structure in AlGaN/GaN HEMT (2) Advance copy for the 68th Autumn Meeting (2007) of the Japan Society of Applied Physics |
| Reduction of Gate-Source Length on AlGaN/GaN HEMT Advance copy for the 54th Spring Meeting (2007) of the Japan Society of Applied Physics and Related Societies |
| Normally-off operation in AlGaN/GaN/AlGaN FET (2) Advance copy for the 54th Spring Meeting (2007) of the Japan Society of Applied Physics and Related Societies |
| Normally-off Operation in AlGaN/GaN FETs Using p-type InGaN Cap Layer Advance copy for the 54th Spring Meeting (2007) of the Japan Society of Applied Physics and Related Societies |
| Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases "Journal of Crystal Growth 298 (2007) 433-436" |
| GaN growth on 150-mm-diameter (111) Si substrates "Journal of Crystal Growth 298 (2007) 198-201" |
| Normally-off operation in AlGaN/GaN/AlGaN HEMT structure (Japanese) Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics |
| Dependence of maximum drain current and transconductance on device structure in AlGaN/GaN HEMT (Japanese) Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics |
| High Breakdown Voltage AlGaN/GaN MIS-HEMT Using Multilayered Insulater Structure (Japanese) Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics |
| Atmospheric pressure growth of AlGaN by production scale GaN MOCVD of 2"X10 capacity (Japanese) Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics |
| Growth and electron transport studies of InAlN/GaN two-dimensional electron gas Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies |
| Fundamental Study of Short Gate-length AlGaN/GaN HEMT (Japanese) Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies |
| Study for on-resistance of AlGaN/GaN HEMT (Japanese) Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies |
| High Breakdown Voltage AlGaN/GaN HEMT Using Two Layer MIS Structure (Japanese) Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies |
| Epitaxial Growth of GaN on 6"(111)Si substrate with MOVPE (Japanese) Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies |
| Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes J. Appl. Phys. 97, 091101 (2005) |
| PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2" × 6 wafers) (Japanese) IEICE technical committee |
| High Speed High Breakdown Voltage AlGaN/GaN HEMT Using MIS Structure (Japanese) Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics |
| A study of normally off-type AlGaN/GaN HEMT (Japanese) Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics |
| Manufacturing of quantum well and ultraviolet high efficiency luminance using the production MOCVD. (Japanese) Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics |
| A study of the low-temperature resistance of AlGaN/GaN HEMT (Japanese) Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics |
| Realization of High Internal Quantum Efficiency over 35% in 330 nm-band deep-UV using Quaternary InAlGaN Quantum Well ICNS-6 Late News |
| Effects of growth pressure on AlGaNand Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system |
| Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design |
| Effect of Growth Parameter on InGaN/GaN MQW Structures Grown with Laminar-Three Flow Multi Wafer AP-MOVPE |
| Development of Atmospheric Pressure Metal Organic Vapor Phase Epitaxy Technology for GaN and Related Alloys |
| Atmospheric pressure growth of GaN using multi wafer reactor |
| Influent of Ambient Hydrogen Gas on Crystalline Quality in GaN |
| Influence of Ambient Hydrogen in InGaN multiple quantum well structure |
| Evaluation of Atmospheric Horizontal GaN-MOCVD System Using Three 2-inch Wafers |