| 1983 | The vertical flow type reactor (VR2000 2"x1) installed at Kawasaki plant MOCVD business started |
| 1985 | Sales and service project team established The horizontal flow type reactor HR3000 2"x1 & HR4000 2"x3 marketed |
| 1992 | Tsukuba Lab. Established for R&D in MOCVD process and equipment |
| 1993 | High throughput face down type HR8000 3"x6 or 4"x4 developed mainly for electronic device epi-wafer |
| 1995 | GaN-MOCVD reactor SR2000 2"x1 developed and customer's choice in Japan |
| 1997 | New clean-room built for system adjustment prior to delivery |
| 1998 | Multi-wafer type GaN-MOCVD reactor SR6000 2"x6 marketed |
| 2000 | Multi-wafer rotation & revolution type MOCVD PR10000 4"x6 develop at Tsukuba |
| 2002 | GaN-MOCVD reactor SR4000 2"x3 marketed for GaN LD and FETs |
| 2003 | Multi-wafer rotation & revolution type MOCVD PR-23000 marketed for DVDs and LDs |
| 2005 | GaN rotation & revolution type MOCVD SR23K 2"x10 developed at Tsukuba |
| 2007 | GaN rotation & revolution type MOCVD SR24K 6"x5 marketed for 6"Si sub |
| 2009 | GaN rotation & revolution type MOCVD for LED UR25K 4"x11 developed at Tsukuba |
| 2011 | GaN rotation & revolution type MOCVD for electron device UR26K 8"x6(6"x10) developed at Tsukuba |
