News

Aug. 4, 2017

CREST orders GaN MOCVD System for HB-LED from TNSC

Jun. 13, 2017

National Institute of Advanced Industrial Science and Technology (AIST) New Research Results "Fabrication of low cost GaAs solar cells grown by HVPE" (Japanese only)

Source: National Institute of Advanced Industrial Science and Technology (AIST)

Jan. 16, 2017

New Energy and Industrial Technology Development Organization (NEDO) entrusted TNSC with a part of the "Development of high performance and reliable PV modules to reduce levelized cost of energy"

Reference: Development of high performance and reliable PV modules to reduce levelized cost of energy (NEDO website, Japanese only)

May 18, 2016

Article about TNSC's MOCVD published in Compound Semiconductor magazine, Volume 22, Issue 3, April/May 2016
VENDOR VIEW Driving diversification in GaN device production (Page 22)

May 18, 2016

Sandia National Laboratories has qualified and accepted commercial MOCVD system SR-4000HT from MATHESON/Taiyo Nippon Sanso Corporation

Mar. 17, 2016

UCSB SSLEEC selects TNSC's SR4000HT MOCVD reactor for deep ultra violet light emitting diode (UVCLED) development.

Dec. 15, 2014

TAIYO NIPPON SANSO Corporation's MOCVD system was mentioned in THE GAS REVIEW No. 396 (November 26, 2014 issue) article about the Nobel Prize in Physics.

Nov. 4, 2014

Taiyo Nippon Sanso installs GaN MOCVD system at Epistar Corp.

Oct. 9, 2014

Sandia National Laboratories Orders Commercial Grade GaN-MOCVD System from Matheson/Taiyo Nippon Sanso

Apr. 16, 2014

TNSC Announces Technical Agreement with ITRI
TNSC, a manufacturer of metal organic chemical vapor deposition (MOCVD) systems, has signed a technical agreement with Taiwan-based ITRI, which is known for its world-class technologies for optoelectronic devices. The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary advanced technology of Taiyo Nippon Sanso. ITRI recognizes that the TNSC AP-MOCVD system has numerous advantages in growing UVA materials, including the high growth rate of low carbon GaN, high luminescence efficiency of low indium content InGaN and GaN, constant pressure and continuous growth of InGaN and AlGaN interface and high doping efficiency of AlGaN thanks to high quality. Potentially, ITRI and TNSC can develop a higher performance UVA LED on a native GaN substrate at a reasonable price than on a conventional sapphire substrate, because it can inject more current into an LED on a native GaN substrate due to low dislocation density and easy current spreading. The near-ideal point light source will improve the utilization efficiency of UV light with simple optics. ITRI and TNSC hope that the partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.

Apr. 16, 2014

ITRI and TNSC unite to enhance GaN LED growth — Compound Semiconductor

Apr. 16, 2014

ITRI and TNSC Unite to Promote UVA LED Production on GaN Substrate — LEDinside

Apr. 16, 2014

TNSC Signs Technical MOCVD Agreement With ITRI — LEDinside

Mar. 16, 2014

Article about TNSC's MOCVD published in Compound Semiconductor magazine
Faster, better III-N film growth (Page 38) — Compound Semiconductor