News

Jun. 30, 2023

Production Efficiency Improved by 2X Compared to Conventional Systems, Announcement of the Release of the UR26K-CCD for Mass Production GaN MOCVD Systems

Feb. 7, 2023

Taiyo Nippon Sanso sponsored, and also exhibited at, IWN 2022 in Berlin, Germany from October 9 (Sun) to 14 (Fri), 2022 and IWGO 2022 in Nagano prefecture from October 23 (Sun) to 27 (Thu). (English translation of TNSC house journal, January 2023)

Oct. 31, 2022

Taiyo Nippon Sanso conducted a presentation at the 41st Electronic Materials Symposium (EMS-41), held in Nara, Japan from October 19 (Wed) to 21 (Fri), 2022.

Topic: In-plane uniformity control of Al composition and thickness for AlGaN-based Far-UVC LEDs growth

Sep. 26, 2022

Taiyo Nippon Sanso is becoming a Gold Sponsor for the Harold M. Manasevit Young Investigator Award, which recognises seminal contributions in MOCVD technology and research.

Jun. 29, 2022

We have begun epitaxy using the newly-developed FR2000-OX Ga2O3 MOCVD system.

Apr. 20, 2022

Taiyo Nippon Sanso Ga2O3 MOCVD System Installed and Qualified for Operation at Tokyo University of Agriculture and Technology

Apr. 7, 2022

Taiyo Nippon Sanso and RIKEN demonstrate MOCVD AlGaN-based deep ultraviolet LED EL emission at 226nm

Jan. 19, 2022

Taiyo Nippon Sanso and North Carolina State University Agree to Three-Year Collaboration to Enable New GaN Optoelectronic Technologies and Commercial Opportunities

May 21, 2021

Sandia National Laboratories Selects Second Taiyo Nippon Sanso SR4000HT MOCVD Platform for Ultra-Wide Bandgap Research and Development

Apr. 1, 2021

Successful metalorganic vapor phase epitaxy of β-gallium oxide crystals
— Accelerating the realization of a carbon-free society through next-generation power devices —

Mar. 31, 2021

Taiyo Nippon Sanso conducted a presentation at 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021), held online from March 7 (Sun) to 11 (Thu), 2021.

Topic: Optimization of p-type Layer for Improvement of Deep Ultraviolet LEDs on 4-inch Substrates Grown by Using a Large-Scale MOCVD Tool

Dec. 10, 2020

Taiyo Nippon Sanso MOCVD equipment division receiving the Industry Award from The Japan Society of Vacuum and Surface Science

Oct. 31, 2020

Taiyo Nippon Sanso conducted a presentation at the 39th Electronic Materials Symposium (EMS-39), held online from October 7 (Wed) to 9 (Fri), 2020.

Topic: Epitaxial growth of four-inch AlGaN-based deep ultraviolet LEDs by using a large-scale mass production MOCVD tool

Oct. 20, 2020

National Institute of Advanced Industrial Science and Technology (AIST) New Research Results "Accelerate the Spread of Highly Efficient Multi-junction Solar Cells" (Japanese only)

Source: National Institute of Advanced Industrial Science and Technology (AIST)

Oct. 20, 2020

Information concerning the Taiyo Nippon Sanso CSE LTD group company has been updated.

Aug. 4, 2017

CREST orders GaN MOCVD System for HB-LED from TNSC

Jun. 13, 2017

National Institute of Advanced Industrial Science and Technology (AIST) New Research Results "Fabrication of low cost GaAs solar cells grown by HVPE" (Japanese only)

Source: National Institute of Advanced Industrial Science and Technology (AIST)

Jan. 16, 2017

New Energy and Industrial Technology Development Organization (NEDO) entrusted TNSC with a part of the "Development of high performance and reliable PV modules to reduce levelized cost of energy"

Reference: Development of high performance and reliable PV modules to reduce levelized cost of energy (NEDO website, Japanese only)

May 18, 2016

Article about TNSC's MOCVD published in Compound Semiconductor magazine, Volume 22, Issue 3, April/May 2016
VENDOR VIEW Driving diversification in GaN device production (Page 22)

May 18, 2016

Sandia National Laboratories has qualified and accepted commercial MOCVD system SR-4000HT from MATHESON/Taiyo Nippon Sanso Corporation

Mar. 17, 2016

UCSB SSLEEC selects TNSC's SR4000HT MOCVD reactor for deep ultra violet light emitting diode (UVCLED) development.

Dec. 15, 2014

TAIYO NIPPON SANSO Corporation's MOCVD system was mentioned in THE GAS REVIEW No. 396 (November 26, 2014 issue) article about the Nobel Prize in Physics.

Nov. 4, 2014

Taiyo Nippon Sanso installs GaN MOCVD system at Epistar Corp.

Oct. 9, 2014

Sandia National Laboratories Orders Commercial Grade GaN-MOCVD System from Matheson/Taiyo Nippon Sanso

Apr. 16, 2014

TNSC Announces Technical Agreement with ITRI
TNSC, a manufacturer of metal organic chemical vapor deposition (MOCVD) systems, has signed a technical agreement with Taiwan-based ITRI, which is known for its world-class technologies for optoelectronic devices. The objective of the agreement is to develop UVA LEDs on GaN substrates with TNSC AP (atmospheric pressure) MOCVD in order to demonstrate the potential of AP-MOCVD, which is a proprietary advanced technology of Taiyo Nippon Sanso. ITRI recognizes that the TNSC AP-MOCVD system has numerous advantages in growing UVA materials, including the high growth rate of low carbon GaN, high luminescence efficiency of low indium content InGaN and GaN, constant pressure and continuous growth of InGaN and AlGaN interface and high doping efficiency of AlGaN thanks to high quality. Potentially, ITRI and TNSC can develop a higher performance UVA LED on a native GaN substrate at a reasonable price than on a conventional sapphire substrate, because it can inject more current into an LED on a native GaN substrate due to low dislocation density and easy current spreading. The near-ideal point light source will improve the utilization efficiency of UV light with simple optics. ITRI and TNSC hope that the partnership will contribute to a new UVA LED technology standard as well as GaN on GaN application promotion.

Apr. 16, 2014

ITRI and TNSC unite to enhance GaN LED growth — Compound Semiconductor

Apr. 16, 2014

ITRI and TNSC Unite to Promote UVA LED Production on GaN Substrate — LEDinside

Apr. 16, 2014

TNSC Signs Technical MOCVD Agreement With ITRI — LEDinside

Mar. 16, 2014

Article about TNSC's MOCVD published in Compound Semiconductor magazine
Faster, better III-N film growth (Page 38) — Compound Semiconductor