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Technical papers List

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
Impact of crystal quality of AlN nucleation layer on the vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on Si
Regrowth of High-Al-content AlGaN and AlN on High-quality AlN Template Fabricated by Annealing at 1700 ℃ under Nitrogen Ambient
High quality Al0.6Ga0.4N and AlN growth on AlN template with a high temperature annealing in N2 ambience
Challenge and Opportunity of high-flow rate MOCVD tool for UV-LED Application
Homoepitaxial Growth Technique of GaN for Vertical Power Electronic Devices (Japanese only)
Relationship between Al compositions of AlGaN buffer layer and vertical leakage current of AlGaN/GaN HEMT on Sio Substrate
MRS Spring
Characterization of AlN and Mg-doped AlxGa1-xN(x>0.2) Grown by Using Horizontal High-flow-rate MOVPE System
2016 ICMOVPE
Improvement of Crystalline Quality of AlN and High-Al-content AlGaN at High Growth Rate Using Horizontal High-flow-rate MOVPE System
CSW 2016
Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN highelectron-mobility transistor structures
CSW 2016
GROWTH OF N-TYPE AlxGa1-xN (x>0.5) WITH LOW ELECTRIC RESISTIVITY AT HIGH V/III RATIO
IWUMD 2016
Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates
Isplasma 2016
Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates
MRS Advances
Variation of vertical direction breakdown voltage of the AlGaN/GaN HEMTs on AlN/Si template substrate as a function of growth temperature of initial Al layer
MRS2016 spring meeting (Poster Session)
NEW TYPE MOCVD SYSTEM “SR4000HT”
Relationship between AlN layer and vertical breakdown voltage of AlGaN/GaN HEMT on Si substrate
Advance copy for the 76th Autumn meeting of Japan Society of Applied Physics (Poster Session)
Growth of n-type AlGan(Al>0.5) at high rate using high-speed-flow MOCVD
Advance copy for the 76th Autumn meeting of Japan Society of Applied Physics (Poster Session)
Correlation of the initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances
Advance copy for the 11th Topical Workshop on Heterostructure Microelectronics (Poster Session)
GaN Single Layer Growth on GaN Substrate with Low C Impurity Density by MOCVD
Advance copy for the 62th Spring Meeting of the Japan Society of Applied Physics (Poster Session)
Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)
Appl. Phys. Express 7, 041003 (2014)
Industry MOCVD: III-N film growth
Compound Semiconductor-Volume 20, Number 2-March 20
Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates
Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool
Jpn. J. Appl. Phys. 52 (2013) 08JB06
Development of high growth rate MOCVD system (UR26K) for large diameter substrate (8 inch × 6 wafers)
High Speed Growth of Nitride-Based Electronic Device Structure on Large Diameter Silicon Substrate with MOCVD
High growth rates of AlN and AlGaN on 8" silicon wafer using metal-organic vapor phase epitaxy reactor
Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate
Appl. Phys. Express 6 (2013) 026501
High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system
Journal of Crystal Growth
Control of Thickness and Composition Variation of AlGaN/GaN on 6" and 8" Substrates Using Multiwafer High-Growth-Rate MOCVD Tool
Advance copy for IWN 2012 (International Workshop on Nitride Semiconductors)
MOCVD growth of AlN/GaN superlattice barrier with low sheet resistance
Advance copy for the 59th Spring Meeting (2012) of the Japan Society of Applied Physics and Related Societies
Current collapse of HJ-FET with MOCVD-grown GaN/AlN superlattice barrier
Advance copy for the 59th Spring Meeting (2012) of the Japan Society of Applied Physics and Related Societies
Atmospheric pressure growth of GaN and Al0.1Ga0.9N using 4" x 11 multi wafer MOVPE reactor (UR25K)
Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics
Initial Stage in Photoelectrochemical Etching of GaN and InGaN/GaN MQWs and their PL characteristics
Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics
Comparison of H2 generation efficiency in water electrolysis between n-GaN and Pt electrodes
Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics
Reduction of Drain Conductance in Recess-Gate AlGaN/GaN HEMTs
Advance copy for the 70th Autumn Meeting (2009) of the Japan Society of Applied Physics
Effects of CF4-Plasma Surface Treatment to AlGaN/GaN MOS-HFETs
Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies
Effect of field plate for current collapse
Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies
Correlation between Hydrogen Generation and Flat-band Potentials of Ga/N-face using Free-standing GaN Electrodes
Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies
Observation by AFM about Initial Stage in Photo Electro Chemical Etching of GaN-related Semiconductors
Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies
Quantification of hydrogen generation by water decomposition on GaN-based semiconductor electrode
Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies
Effect of growth pressure in AlN on Si(111) at high growth temperature
Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies
Influence of Impurities in NH3 Gas on InGaN Light Emitting Diodes grown by Metal-organic Vapor Phase Epitaxy
Advance copy for the 56th Spring Meeting (2009) of the Japan Society of Applied Physics and Related Societies
High Rate Growth of GaN with Atmospheric Pressure MOVPE
Advance copy for the 69th Autumn Meeting (2008) of the Japan Society of Applied Physics
High growth rate metal organic vapor phase epitaxy GaN
"Journal of Crystal Growth 310(2008)3950-3952)"
Multiwafer atmospheric-pressure MOVPE reactor for nitride semiconductors and ex-situ dry cleaning of reactor components using chlorine gas for stable operation
"Phys.Stat.Sol.(c)5,No.9,3017-3019(2008)"
Plasma-CVD-Deposited SiN Surface Passivation on AlGaN/GaN HEMTs
Advance copy for the 55th Spring Meeting (2008) of the Japan Society of Applied Physics and Related Societies
High Breakdown Voltage AlGaN/GaN HEMT with Field Plate Structure
Advance copy for the 55th Spring Meeting (2008) of the Japan Society of Applied Physics and Related Societies
Effects of Moisture Impurities in NH3 Gas on InGaN Light Emitting Diodes grown by Metal-organic Vapor Phase Epitaxy
Advance copy for the 55th Spring Meeting (2008) of the Japan Society of Applied Physics and Related Societies
Effects of trace moisture in NH3 gas on electroluminescence intensity of InGaN LED
-Moisture control in NH3 gas for MOVPE growth of LED structure -
IEICE Technical Committee (October 11 - 12, 2007, University of Fukui)
Multi-wafer Atmospheric Pressure MOVPE Reactor for Nitride Semiconductors and ex-situ Dry Cleaning of Reactor Components by Chlorine Gas for Stable Operation
Advance copy for the 34th International Symposium on Compound Semiconductors (ISCS2007)
Dependence of maximum drain current and transconductance on device structure in AlGaN/GaN HEMT (2)
Advance copy for the 68th Autumn Meeting (2007) of the Japan Society of Applied Physics
Reduction of Gate-Source Length on AlGaN/GaN HEMT
Advance copy for the 54th Spring Meeting (2007) of the Japan Society of Applied Physics and Related Societies
Normally-off operation in AlGaN/GaN/AlGaN FET (2)
Advance copy for the 54th Spring Meeting (2007) of the Japan Society of Applied Physics and Related Societies
Normally-off Operation in AlGaN/GaN FETs Using p-type InGaN Cap Layer
Advance copy for the 54th Spring Meeting (2007) of the Japan Society of Applied Physics and Related Societies
Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases "Journal of Crystal Growth 298 (2007) 433-436"
GaN growth on 150-mm-diameter (111) Si substrates "Journal of Crystal Growth 298 (2007) 198-201"
Normally-off operation in AlGaN/GaN/AlGaN HEMT structure (Japanese)
Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics
Dependence of maximum drain current and transconductance on device structure in AlGaN/GaN HEMT (Japanese)
Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics
High Breakdown Voltage AlGaN/GaN MIS-HEMT Using Multilayered Insulater Structure (Japanese)
Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics
Atmospheric pressure growth of AlGaN by production scale GaN MOCVD of 2"X10 capacity (Japanese)
Advance copy for the 67th Autumn Meeting (2006) of the Japan Society of Applied Physics
Growth and electron transport studies of InAlN/GaN two-dimensional electron gas
Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies
Fundamental Study of Short Gate-length AlGaN/GaN HEMT (Japanese)
Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies
Study for on-resistance of AlGaN/GaN HEMT (Japanese)
Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies
High Breakdown Voltage AlGaN/GaN HEMT Using Two Layer MIS Structure (Japanese)
Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies
Epitaxial Growth of GaN on 6"(111)Si substrate with MOVPE (Japanese)
Advance copy for the 53rd Spring Meeting (2006) of the Japan Society of Applied Physics and Related Societies
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
J. Appl. Phys. 97, 091101 (2005)
PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2" × 6 wafers) (Japanese)
IEICE technical committee
High Speed High Breakdown Voltage AlGaN/GaN HEMT Using MIS Structure (Japanese)
Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics
A study of normally off-type AlGaN/GaN HEMT (Japanese)
Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics
Manufacturing of quantum well and ultraviolet high efficiency luminance using the production MOCVD. (Japanese)
Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics
A study of the low-temperature resistance of AlGaN/GaN HEMT (Japanese)
Advance copy for the 66th Autumn Meeting (2005) of the Japan Society of Applied Physics
Realization of High Internal Quantum Efficiency over 35% in 330 nm-band deep-UV using Quaternary InAlGaN Quantum Well
ICNS-6 Late News
Effects of growth pressure on AlGaNand Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system
Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design
Effect of Growth Parameter on InGaN/GaN MQW Structures
Grown with Laminar-Three Flow Multi Wafer AP-MOVPE
Development of Atmospheric Pressure Metal Organic Vapor Phase Epitaxy Technology for GaN and Related Alloys
Atmospheric pressure growth of GaN using multi wafer reactor
Influent of Ambient Hydrogen Gas on Crystalline Quality in GaN
Influence of Ambient Hydrogen in InGaN multiple quantum well structure
Evaluation of Atmospheric Horizontal GaN-MOCVD System Using Three 2-inch Wafers