Events

Jun. 6, 2017 Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth at the 12th International Conference on Nitride Semiconductors (ICNS-12) from July 24 (Mon) to 28 (Fri), 2017 at Strasbourg Convention Center, Strasbourg, France.
Presentation Topic
  • Characteristics of AlN layer on 4-inch sapphire substrate by high temperature annealing in nitrogen atmosphere
Jun. 6, 2017 Taiyo Nippon Sanso is planning a presentation and will also have an exhibit booth with Matheson TRI-Gas at the 18th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-18) from July 30 (Sun) to August 4 (Fri), 2017 at Eldorado Hotel and Spa, Santa Fe, NM, USA.
Presentation Topic
  • Properties of GaN on high quality AlN sapphire template by using metalorganic chemical vapor deposition
Jun. 6, 2017 The National Institute of Advanced Industrial Science and Technology (AIST) and Taiyo Nippon Sanso are planning two presentations at the 44th Photovoltaic Specialists Conference (PVSC 2017) from June 25 (Sun) to 30 (Fri), 2017 at the Washington Marriott Wardman Park, Washington D.C., USA.
Presentation Topic
  • Characterization of GaAs solar cells grown by hydride vapor phase epitaxy in a horizontal reactor
  • Extremely high-speed GaAs growth by MOVPE for low cost PV application
Apr. 3, 2017 Taiyo Nippon Sanso is planning a presentation at Compound Semiconductor Week 2017 (CSW 2017) from May 14 (Sun) to 18 (Thu), 2017 at “dbb forum berlin” in Berlin, Germany.
Mar. 16, 2017 Taiyo Nippon Sanso is planning a presentation at the 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '17) from April 19 (Wed) to 21 (Fri), 2017 at Pacifico Yokohama, Yokohama, Japan.
Mar. 16, 2017 Taiyo Nippon Sanso is planning a presentation at the 64th JSAP Spring Meeting 2017 (JSAP Spring 2017) from March 14 (Tue) to 17 (Fri), 2017 at Pacifico Yokohama, Yokohama, Japan.
Sep. 5, 2016 Taiyo Nippon Sanso plans to have a booth (Booth #2) at the 25th International Semiconductor Laser Conference (ISLC2016) from September 12 (Mon) to 15 (Thu), 2016 at the Kobe Meriken Park Oriental Hotelin in Kobe, Japan.
Sep. 5, 2016 Taiyo Nippon Sanso is planning three presentation during the poster session at the 77th JSAP Autumn Meeting 2016 from September 13 (Tue) to 16 (Fri), 2016 at the Toki Messe in Nigata, Japan.
Poster Presentation
  • Session: 14a-P6-15
  • Topic: The influence of number of strained-layer super-lattice (SLS) periods in vertical direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor on Si substrates
  • Date & Time: Sep. 14 (Wed), 2016 9:30AM-11:30AM
  • Session: 16a-P5-18
  • Topic: Regrowth of AlGaN (Al > 0.5) and AlN on AlN Template Processed by High temperature Annealing at Nitrogen Atmosphere
  • Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM
  • Session: 16a-P5-19
  • Topic: Control of C and Si Doping in Low Si-doped GaN Using Multiwafer MOCVD Tool
  • Date & Time: Sep. 16 (Fri), 2016 9:30AM-11:30AM
Sep. 5, 2016 Taiyo Nippon Sanso is planning two presentations at the European Materials Reserch Society (E-MRS) 2016 Fall Meeting from September 19 (Mon) to 22 (Thu), 2016 at the Warsaw University of Technology in Warsaw, Porland.
Oral Presentation
  • Session: G.2.1
  • Topic: Challenges to GaN MOCVD: High Growth rate and High Purity
  • Date & Time: Sep 19 (Mon), 2016 11:00AM
Poster Presentation
  • Session: F.P.1.13
  • Topic: Characterization of AlN and AlxGa1-xN (x > 0.5) films regrown by high-temperature MOCVD on N2-annealed AlN template
  • Date & Time: Sep 19 (Mon), 2016 5:45PM
Sep. 5, 2016 Taiyo Nippon Sanso is planning to give two presentations during the poster session at the International Workshop on Nitride Semiconductors (IWN) 2016 and Matheson TRI-Gas/Taiyo Nippon Sanso will also have an exhibit booth from October 2 (Sun) to 6 (Thu), 2016 at the Hilton Orlando Lake Buena Vista in Orlando, Florida USA.
Also, Sandia National Laboratories will give an oral presentation about a paper called "Low Etch Pit Density AlN on Sapphire" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster Presentation
  • Session: PS1.27 at Grand Ballroom
  • Topic: Regrowth of High‐Al‐Content AlGaN and AlN on High‐Quality AlN Template Fabricated by Annealing at 1700C under Nitrogen Ambient
  • Date & Time: Oct. 3 (Mon), 2016 6:30PM-8:30PM
  • Session: PS2.122 at Grand Ballroom
  • Topic: Impact of Crystal Quality of AlN Nucleation Layer on the Vertical Direction Breakdown Voltage of AlGaN/GaN High-Electron-Mobility Transistor Structures on Si
  • Date & Time: Oct. 6 (Thu), 2016 9:45AM-10:45AM
Sandia National Laboratories Oral Presentation
  • Session: A2.7.05 Epitaxial Growth VII: Epitaxial Growth of (Al,Ga)N at International South
  • Topic: Low Etch Pit Density AlN on Sapphire
  • Date & Time: Oct. 6 (Thu), 2016 9:15AM
Jun. 17, 2016 Taiyo Nippon Sanso is planning to give a presentation at the International Workshop on UV Materials and Devices (IWUMD-2016) which will be held in the School of Physics, Peking University.
May 18, 2016 Taiyo Nippon Sanso is planning to give a presentation during the poster session at the 18th International Conference on Metal Organic Vapor Phase Epitaxy and will also have an exhibit (Booth #18) from July 10 to 15 at the Sheraton San Diego Hotel & Marina. Also, Sandia National Laboratories will give an oral presentation about a paper called "Growth Evolution of AlN on Sapphire at High Temperature" that it co-authored with Taiyo Nippon Sanso.
TNSC Poster presentation
  • Session: PS-1
  • Topic: Characterization of AlN and Mg-Doped AlxGa1-xN (x>0.2) Grown by Using Horizontal High-Flow-Rate MOVPE System
  • Date & Time: Jul. 12, 4:00PM-6:00PM
Sandia National Laboratories Oral presentation
  • Session: 1D-1 AlN Heteroepitaxy at Grande Ballroom C
  • Topic: Growth Evolution of AlN on Sapphire at High Temperature
  • Date & Time: Jul. 11, 4:00PM
May 18, 2016 Taiyo Nippon Sanso is planning two presentations during the poster session at the 2016 Compound Semiconductor Week (CSW2016) and will also have an exhibit (Booth #6) from June 26 to 30 at the Toyama International Conference Center, Toyama, Japan.
Feb. 22, 2016 Taiyo Nippon Sanso is planning a presentation during the ISPlasma symposium from March 6 to 10, 2016 at Nagoya University.
The topic will be “Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates.”
Feb. 22, 2016 Taiyo Nippon Sanso is planning a presentation during the 63rd JSAP Spring Meeting, 2016 from March 19 to 22 at the Tokyo Institute of Technology.
The topic will be “Relationship between Al compositions of AlGaN buffer layer and vertical leakage current of AlGaN/GaN HEMT on Si substrate.”
Feb. 22, 2016 Taiyo Nippon Sanso is planning a presentation during the poster session at the 2016 MRS Spring Meeting & Exhibit from March 28 to April 1 at the Phoenix Convention Center.
The topic will be “Variation of Vertical Direction Breakdown Voltage of the AlGaN/GaN HEMTs on AlN/Si Template Substrate as a Function of the Growth Temperature of the Initial Al Layer.”
Oct. 6, 2015 Taiyo Nippon Sanso is planning a presentation during the oral session at The 9th International Workshop on Bulk Nitride Semiconductors from November 2 to 6, 2015 at Oak Valley in Wonju, South Korea.
Topic will be "Low C and Si residual concentration of GaN grown on GaN Substrates by MOCVD"
Oct. 6, 2015 Taiyo Nippon Sanso is planning a presentation at The 6th International Symposium on Growth of Ⅲ-Nitrides from November 8 to 13, 2015 at Act City Hamamatsu in Hamamatsu, Japan.
Topic of the poster session will be "Si-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-speed-flow MOVPE reactor"
Topic of the keynote lecture will be "Opportunities and Challenges to GaN MOCVD for Electron Devices"
Oct. 6, 2015 Taiyo Nippon Sanso is planning a presentation during the oral cession IEICE Technical Committee from November 26 to 27, 2015 at Osaka City University Media center in Osaka, Japan.
Topic will be "Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate"
Sep. 1, 2015 Taiyo Nippon Sanso is planning a presentation during the poster session at the 76th JSAP Autumn Meeting 2015 from September 13 to 16, 2015 at Nagoya Congress Center in Nagoya, Japan.
The topics will be "Growth of n-type AlGaN (Al>0.5) at high rate using high-speed-flow MOCVD" and "Relationship between AlN layer and vertical breakdown voltage of AlGaN/GaN HEMT on Si substrate".
Aug. 4, 2015 Taiyo Nippon Sanso plans to have a booth at the 11th International Conference on Nitride Semiconductors (ICNS-11) from August 30 to September 4, 2015 at the Beijing International Convention Center in Beijing, China.
Aug. 4, 2015 Taiyo Nippon Sanso plans to have a booth at the 11th Topical Workshop on Heterostructure Microelectronics (TWHM) from August 23 to 26, 2015 at Hida Hotel Plaza in Takayama, Japan.
It is also planning to participate in the poster session on the topic of "Correlation of initial AlN layer and vertical direction current leakage of AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substances".
Aug. 4, 2015 Taiyo Nippon Sanso plans to have a booth at the Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP) from August 20 to 21, 2015 at Hilton Fukuoka Sea Hawk in Fukuoka, Japan.new window open
Feb. 26, 2015

Taiyo Nippon Sanso plans to have a booth at LED Taiwan 2015 from March 25 to 28, 2015 at the TWTC Nangang Exhibit Hall in Taipei, Taiwan.

Jul. 2, 2014

Taiyo Nippon Sanso plans to have a booth at IWN 2014 (International Workshop on Nitride Semiconductors 2014) from August 24 to 29, 2014 at the Centennial Hall in Wroclaw, Poland.

Jul. 2, 2014

Taiyo Nippon Sanso plans to have a booth at SSDM2014 (Solid State Devices and Materials 2014) from September 8 to 11, 2014 at the Tsukuba International Congress Center.

Apr. 18, 2014

Taiyo Nippon Sanso will be holding a booth at the 5th International Symposium on Growth of Ⅲ-Nitrides (ISGN-5) at the Westin Hotel, Peachtree Plaza (Atlanta, Georgia) from May 18 to 22, 2014.

Mar. 18, 2014

Taiyo Nippon Sanso will have a booth at "LED Taiwan 2014," to be held at TWTC Nangang Exhibit Hall, Taiwan from March 20 to 23, 2014.

Aug. 1, 2013

Taiyo Nippon Sanso is planning both a booth and a presentation on the epi-results of its MOCVD systems during the poster session at ICNS-10 (10th International Conference on Nitride Semiconductors) from August 25 to 30, 2013 at Gaylord National Hotel and Convention Center, Washington.
TNSC poster session presentation: August 28, 2013

Aug. 1, 2013

Taiyo Nippon Sanso plans to have a booth at TWHM 2013 (10th Topical Workshop on Heterostructure Microelectronics) from September 2 to 5, 2013 at Hakodate Kokusai Hotel.

Aug. 1, 2013

Taiyo Nippon Sanso plans to have a booth at SEMICON Taiwan 2013 from September 4 to 6, 2013 at TWTC Nangang Exhibition Hall, Taiwan.